3 Dokumente gefunden
Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride : A Route to 3D Nanoporous Patterning
Dopant‐selective electrochemical etching (ECE) of gallium nitride (GaN) results in well‐defined porous layers with tunable refractive index, which is extremely interesting for integrating photonic components into nitride technology. Herein, the impact of nitrogen implantation with and without subsequent…
Weinheim: Wiley-VCH, 2024-11-11
A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN
The commonly observed absorption around 265 nm in AlN is hampering the outcoupling efficiency of light‐emitting diodes (LEDs) emitting in the UV‐C regime. Carbon impurities in the nitrogen sublattice (C N ) of AlN are believed to be the origin of this absorption. A specially tailored experiment using…
Weinheim: Wiley-VCH, 2023-08-18
A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN
Herein, carbon‐implanted high‐temperature annealed (HTA) AlN layers are analyzed and donor–acceptor pair (DAP) transitions probably between the two most abundant impurities, carbon and oxygen, are identified. Both are regarded as the main, hard‐to‐avoid impurities in crystal growth. Oxygen is believed…
Weinheim: Wiley-VCH, 2023-08-18