Scientific progress is made in understanding photoluminescence (PL) lines in thallium-doped silicon. Two PL lines called A and P, which appear after quenching, are found to exhibit irreversible as well as reversible behavior under the application of light-induced degradation (LID) treatments. The reversible…
The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the ASi-Sii-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the BSi-Sii-defect formation under…
Low-gain avalanche detectors (LGAD) suffer from an acceptor removal phenomenon due to irradiation. This acceptor removal phenomenon is investigated in boron, gallium, and indium implanted samples by 4-point-probe (4pp) measurements, low-temperature photoluminescence spectroscopy (LTPL), and secondary…
Im Rahmen dieser Arbeit wurde erstmals mit Hilfe von XPS und AFM systematisch das Alterungsverhalten von Floatgläsern unter Berücksichtigung von drei kommerziell relevanten Aspekten untersucht: Vorspannprozesse, Korrosion bei Belegung mit Partikeln und Glasschutzmittel. Es konnten zwei spezifische Carbonatphasen…