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Dissertation
All rights reserved
2020-06-08

Design and performance analysis of Tri-gate GaN HEMTs

GaN-based high electron mobility transistors (HEMT) are promising devices for radio frequency (RF) and high-power electronics and are already in use for RF power amplifiers and for power switches. Commonly, these devices are normally-on transistors, i.e., they are in the on-state at zero applied gate...