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2015-06-04

Identification of photoluminescence P line in indium doped silicon as InSi-Sii...

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiNx:H/SiOx stack and on characteristic illumination...