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Polarity dependent predictable and random resistive switching in forming-free unipolar memristors

Polycrystalline, hexagonal HoMnO3 thin films sandwiched between an un-patterned Pt/Ti bottom electrode and a circularly patterned Al top electrode reveal forming-free, polarity dependent predictable and random, unipolar resistive switching with stable retention, and a resistance ratio between high resistance…
New York, NY: AIP Publishing, 2025-01-13