6 Dokumente gefunden

Tuning relaxation and nonlinear upconversion of valley-exciton-polaritons in a monolayer semiconductor

Abstract Controlling exciton relaxation and energy conversion pathways via their coupling to photonic modes is a central task in cavity-mediated quantum materials research. In this context, the light-matter hybridization in optical cavities can lead to intriguing effects, such as modified carrier transport,…
[London]: Springer Nature, 2025-11-03

Tunable Exciton Modulation and Efficient Charge Transfer in MoS 2 /Graphene van der Waals Heterostructures

aus: ACS Nano
Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors where the optical properties are dominated by strongly interacting electron–hole quasi-particles. Understanding the interactions among these quasi-particles is crucial for advancing optoelectronic applications. Here, we examine…
Washington, DC: American Chemical Society, 2025-05-15

Ultrafast Opto‐Electronic and Thermal Tuning of Third‐Harmonic Generation in a Graphene Field Effect Transistor

Abstract Graphene is a unique platform for tunable opto‐electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light‐matter interactions. Tuning the nonlinear optical response of graphene is possible both electrically and in an all‐optical fashion, but…
Weinheim: Wiley-VCH, 2024-06-18

Tuning the Electronic Characteristics of Monolayer MoS 2 ‐Based Transistors by Ion Irradiation: The Role of the Substrate

Abstract This study explores defect engineering in 2D materials using ion beam irradiation to modify the electrical and optical properties with potential in advancing quantum electronics and photonics. Helium and neon ions ranging from 5 to 7.5 keV are employed to manipulate charge transport in monolayer…
Weinheim: Wiley-VCH, 2024-05-13

Exciton spectroscopy and unidirectional transport in MoSe 2 -WSe 2 lateral heterostructures encapsulated in hexagonal boron…

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures. Critical for carrier and exciton transport is the material quality and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure…
London: Nature Publishing Group, 2022-11-19

Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides

One‐pot chemical vapor deposition (CVD) growth of large‐area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermodynamic‐equilibrium‐driven…
Weinheim: Wiley-VCH, 2022-09-23