https://www.db-thueringen.de/receive/dbt_mods_00069351https://www.db-thueringen.de/servlets/MCRFileNodeServlet/dbt_derivate_00070698/015313_1_5.0226262.pdfhttps://www.db-thueringen.de/rsc/thumbnail/dbt_mods_00069351.png Polarity dependent predictable and random resistive switching in forming-free unipolar memristors Rayapati, Venkata Rao 0009-0000-7362-2896 1280829451 aut Author Rayapati Venkata Rao Leibniz Institute of Photonic Technology, Jena Vegesna, Sahitya Varma 0000-0002-1977-1206 1217627359 aut Author Vegesna Sahitya Varma Leibniz Institute of Photonic Technology, Jena Institute for Solid State Physics, University of Jena, Jena article Bhat, Vinayak Jayram 0009-0002-9185-3967 1217627146 aut Author Bhat Vinayak Jayram Leibniz Institute of Photonic Technology, Jena Blaschke, Daniel 0000-0002-7407-0453 1192700961 aut Author Blaschke Daniel Leibniz Institute of Photonic Technology, Jena Diegel, Marco 0009-0006-8748-3392 1316657558 aut Author Diegel Marco Leibniz Institute of Photonic Technology, Jena Dellith, Andrea 0009-0009-5611-4588 135981941X aut Author Dellith Andrea Leibniz Institute of Photonic Technology, Jena urn:nbn:de:gbv:27-dbt-69351-9 Dellith, Jan 0009-0008-0930-4437 135947227 aut Author Dellith Jan Leibniz Institute of Photonic Technology, Jena Bürger, Danilo 0000-0003-0685-5301 aut Author Bürger Danilo Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf e.V., 01328 Dresden Skorupa, Ilona aut Author Skorupa Ilona Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf e.V., 01328 Dresden Schmidt, Heidemarie 0000-0001-7100-6926 121791939 aut Author Schmidt Heidemarie Leibniz Institute of Photonic Technology, Jena Institute for Solid State Physics, University of Jena, Jena AIP Publishing 2025-01-13 15 1 015313 text continuingjournal AIP Advances journal New York, NY American Inst. of Physics 2011 en 530 2158-3226 http://uri.gbv.de/document/gvk:ppn:641391706 2583909-3 his Host institution 2016-07-11 10.1063/5.0226262 article text en 530 11 Seiten his Host institution bibliography Polycrystalline, hexagonal HoMnO3 thin films sandwiched between an un-patterned Pt/Ti bottom electrode and a circularly patterned Al top electrode reveal forming-free, polarity dependent predictable and random, unipolar resistive switching with stable retention, and a resistance ratio between high resistance state (HRS) and low resistance state (LRS) larger than 104. An equivalent circuit model is proposed to describe the HoMnO3 memristor as a three-layered capacitor structure. Based on the energy band diagram of the HoMnO3 structure under applied negative and positive write bias, polarity dependent, predictable, and random resistive switching is explained. Furthermore, the conductance in LRS until RESET and in HRS until SET has been investigated. The conductance in LRS is large and constant until RESET bias is reached. The conductance in HRS increases from nearly zero to quantum conductance G0 (2e2/h) until SET bias is reached. Zweitveröffentlichung dbt_mods_00069351https://www.db-thueringen.de/receive/dbt_mods_00069351