Erbium doping of lithium niobate on insulator using low-temperature ion exchange

GND
1305402618
ORCID
0000-0002-9730-0071
Affiliation
Abbe Center of Photonics, Friedrich Schiller University, Jena
Younesi, Mohammadreza;
Affiliation
Department of Optics and Photonics, National Central University, Jhongli 320, Taiwan
Yang, Daniel;
Affiliation
Department of Optics and Photonics, National Central University, Jhongli 320, Taiwan
Chung, Wei-Yuan;
Affiliation
Department of Optics and Photonics, National Central University, Jhongli 320, Taiwan
Liu, Hao-Yun;
GND
1322963479
Affiliation
Abbe Center of Photonics, Friedrich Schiller University, Jena
Kumar, Mohit;
GND
1323061991
Affiliation
Abbe Center of Photonics, Friedrich Schiller University, Jena
Abed, Omid;
GND
1317626141
Affiliation
Abbe Center of Photonics, Friedrich Schiller University, Jena
Fedotova, Anna;
GND
112211561X
Affiliation
Fraunhofer Institute of Applied Optics and Precision Engineering, Jena
Geiss, Reinhard;
GND
1028555601
Affiliation
Abbe Center of Photonics, Friedrich Schiller University, Jena
Setzpfandt, Frank;
Affiliation
Department of Optics and Photonics, National Central University, Jhongli 320, Taiwan
Chen, Yen-Hung;
GND
128852666
Affiliation
Abbe Center of Photonics, Friedrich Schiller University, Jena
Pertsch, Thomas

We propose an optimized low-temperature ion exchange method for fabricating an erbium-doped lithium niobate on insulator (LNOI) substrate. This method ensures the production of high-quality, crack-free substrates. The erbium-doped substrates are characterized spectroscopically in the near-infrared wavelength range. Additionally, we demonstrate deterministic local doping by using a SiO2 mask. This relatively simple, locally selective doping technology can facilitate the implementation of new and practical active building blocks in the LNOI platform, which could be attractive for several applications, like the realization of integrated lasers and amplifiers.

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