PT Journal
AU Gan, Z
   Paradisanos, I
   Estrada‐Real, A
   Picker, J
   Najafidehaghani, E
   Davies, F
   Neumann, C
   Robert, C
   Wiecha, P
   Watanabe, K
   Taniguchi, T
   Marie, X
   Biskupek, J
   Mundszinger, M
   Leiter, R
   Kaiser, U
   Krasheninnikov, A
   Urbaszek, B
   George, A
   Turchanin, A
TI Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides
SO Advanced materials
JI Adv. Mater
PD September
PY 2022
BP 1
EP 9
VL 34
IS 38
PU Wiley-VCH
DI 10.1002/adma.202205226
WP https://www.db-thueringen.de/receive/dbt_mods_00054666
LA en
DE 2D materials; exciton–phonon coupling; high optical quality; Janus transition metal dichalcogenides; monolayers; Hochleistungswerkstoff; Werkstoff
SN 1521-4095
AB One‐pot chemical vapor deposition (CVD) growth of large‐area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermodynamic‐equilibrium‐driven exchange of the bottom Se atoms of the initially grown MoSe 2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X‐ray photoelectron spectroscopy, transmission electron microscopy, and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto‐optical measurements which reveal the strong exciton–phonon coupling and enable an exciton g ‐factor of −3.3.
PI Weinheim
ER