Study on sneak path effect in self-rectifying crossbar arrays based on emerging memristive devices

GND
1238198511
Affiliation
Friedrich Schiller University Jena
Chen, Ziang;
Affiliation
Department of Electrical Engineering and Information Technology ,Technical University of Chemnitz ,Chemnitz ,Germany
Zhang, Guofu;
GND
1302206656
Affiliation
Friedrich Schiller University Jena
Cai, Hao;
Affiliation
Institute of Materials in Electrical Engineering and Information Technology ,RWTH Aachen University ,Aachen ,Germany
Bengel, Christopher;
Affiliation
Peter Grünberg Institut (PGI-7) ,Forschungszentrum Juelich GmbH ,Juelich ,Germany
Liu, Feng;
GND
1231840684
Affiliation
Friedrich Schiller University Jena ,Jena ,Germany
Zhao, Xianyue;
Affiliation
Andrew and Erna Viterbi Faculty of Electrical and Computer Engineering ,Technion-Israel Institute of Technology ,Haifa ,Israel
Kvatinsky, Shahar;
GND
121791939
Affiliation
Friedrich Schiller University Jena
Schmidt, Heidemarie;
Affiliation
Institute of Materials in Electrical Engineering and Information Technology ,RWTH Aachen University ,Aachen ,Germany
Waser, Rainer;
Affiliation
Peter Grünberg Institut (PGI-7) ,Forschungszentrum Juelich GmbH ,Juelich ,Germany
Menzel, Stephan;
Affiliation
riedrich Schiller University Jena
Du, Nan

The high demand for performance and energy efficiency poses significant challenges for computing systems in recent years. The memristor-based crossbar array architecture is enthusiastically regarded as a potential competitor to traditional solutions due to its low power consumption and fast switching speed. Especially by leveraging self-rectifying memristive devices, passive crossbar arrays potentially enable high memory densities. Nonetheless, due to the lack of a switching control per cell, these passive, self-rectifying memristive crossbar arrays (srMCA) suffer from sneak path current issues that limit the range of accurate operation of the crossbar array. In this work, the sneak path current issues in the passive srMCAs based on self-rectifying bipolar and complementary switching memristive devices are comparatively analyzed. Under consideration of the worst-case scenario, three reading schemes are investigated: one wordline pull-up (OneWLPU), all wordline pull-up (AllWLPU), and floating (FL) reading schemes. As a conclusion, despite different switching dynamics, both types of self-rectifying memristive devices can efficiently suppress sneak path current in the srMCAs. In the FL reading scheme, the sneak path current flowing through the unselected reversely biased memristive cells in the srMCA can be considered as an accurate estimation for the practical sneak path current in the srMCA. By analyzing the sneak path current in the srMCAs with a size up to 64 × 64, it is demonstrated that the leakage current plays a crucial role for suppressing the sneak path current, and the sneak path current via an individual cell exhibits a continuous decrease while the accumulated total sneak path current in the unselected reverse biased region is increasing with expanding the crossbar size. The comparative study on the bipolar and complementary memristive devices based srMCAs under diverse reading schemes reveals the influence of the switching dynamics on the sneak path current effect in the srMCAs, and provides a beneficial reference and feasible solutions for the future optimization of the crossbar topology with the intention of mitigating sneak path effects.

Cite

Citation style:
Could not load citation form.

Rights

License Holder: Copyright © 2022 Chen, Zhang, Cai, Bengel, Liu, Zhao, Kvatinsky, Schmidt, Waser, Menzel and Du.

Use and reproduction: