Photoionization of low-charged silicon ions

Affiliation
I. Physikalisches Institut, Justus-Liebig-Universität Gießen ,35392 Giessen ,Germany
Buhr, T;
Affiliation
Helmholtz-Institut Jena ,07743 Jena ,Germany
Stock, S O;
Affiliation
I. Physikalisches Institut, Justus-Liebig-Universität Gießen ,35392 Giessen ,Germany
Perry-Sassmannshausen, A;
Affiliation
Institut für Experimentalphysik, Universität Hamburg ,22761 Hamburg ,Germany
Reinwardt, S;
Affiliation
Institut für Experimentalphysik, Universität Hamburg ,22761 Hamburg ,Germany
Martins, M;
Affiliation
Institute for Nuclear Research, Hungarian Academy of Sciences (MTA Atomki) ,4001 Debrecen ,Hungary
Ricz, S;
Affiliation
Institut für Atom- und Molekülphysik, Justus-Liebig-Universität Gießen ,35392 Giessen ,Germany
Müller, A;
Affiliation
Helmholtz-Institut Jena ,07743 Jena ,Germany
Fritzsche, S;
Affiliation
I. Physikalisches Institut, Justus-Liebig-Universität Gießen ,35392 Giessen ,Germany
Schippers, S

Synopsis Single and multiple photoionization of Si 1+ , Si 2+ , and Si 3+ ions have been investigated near the silicon K-edge using the PIPE setup at beamline P04 of the synchrotron light source PETRA III operated by DESY in Hamburg, Germany. Pronounced resonance structures are observed for all ions which are associated with excitation or ionization of a K -shell electron. The experimental cross sections are compared with results from theoretical calculations.

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