@Article{dbt_mods_00044929,
  author = 	{Sevillano-Bendez{\'u}, Miguel {\'A}ngel
		and Dulanto, Jorge A.
		and Conde, L.A.
		and Grieseler, Rolf
		and Guerra, Jorge A.
		and T{\"o}fflinger, Jan Amaru
		and {Peruvian Workshop on Solar Energy (JOPES) ; (Lima) : 2019.05.08-10}},
  title = 	{Capacitance voltage curve simulations for different passivation parameters of dielectric layers on silicon},
  journal = 	{Journal of physics: Conference Series},
  year = 	{2020},
  month = 	{Jan},
  day = 	{01},
  publisher = 	{IOP Publ.},
  address = 	{Bristol},
  volume = 	{1433, 2020},
  pages = 	{art. 012007},
  abstract = 	{Surface passivation is a widely used technique to reduce the recombination losses at the semiconductor surface. The passivating layer performance can be mainly characterized by two parameters: The fixed charge density (Q ox) and the interface trap density (D it) which can be extracted from Capacitance-Voltage measurements (CV). In this paper, simulations of High-Frequency Capacitance-Voltage (HF-CV) curves were developed using simulated passivation parameters in order to examine the reliability of measured results. The D it was modelled by two different sets of functions: First, the sum of Gaussian functions representing different dangling bond types and exponential tails for strained bonds. Second, a simpler U-shape model represented by the sum of exponential tails and a constant value function was employed. These simulations were validated using experimental measurements of a reference sample based on silicon dioxide on crystalline silicon (SiO2/c-Si). Additionally, a fitting process of HF-CV curves was proposed using the simple U-shape D it model. A relative error of less than 0.4{\%} was found comparing the average values between the approximated and the experimentally extracted D it's. The constant function of the approximated D it represents an average of the experimentally extracted D it for values around the midgap energy where the recombination efficiency is highest.},
  note = 	{1.2004 -},
  issn = 	{1742-6596},
  doi = 	{10.1088/1742-6596/1433/1/012007},
  url = 	{https://www.db-thueringen.de/receive/dbt_mods_00044929},
  url = 	{http://uri.gbv.de/document/gvk:ppn:1688980253},
  url = 	{http://uri.gbv.de/document/gvk:ppn:470957794},
  url = 	{https://doi.org/10.1088/1742-6596/1433/1/012007},
  file = 	{:https://www.db-thueringen.de/servlets/MCRFileNodeServlet/dbt_derivate_00049941/1742-6596_1433_2020_012007.pdf:PDF},
  language = 	{en}
}