n-doped InGaP nanowire shells in GaAs/InGaP core-shell p-n junctions

Category

Conference:

Compound Semiconductor Week (CSW) ; (Nara) : 2019.05.19-23

Published in:

Physica status solidi : B. Basic research
Vol. 257, No. 2 (02.05.2020)Art.-No.:1900358

Volume:

257

No.:

2

Date Created:

16.06.2020

Date Issued:

02.05.2020

DOI:

10.1002/pssb.201900358

PPN:

1691128147

Language:

English

Type of Resource:

Text

Extent:

9 Seiten

Keywords:

core–shell nanowires; GaAs; InGaP; p–n junctions

DDC subject of DNB:

530 Physics

Hosting institution:

Technische Universität Ilmenau, Fakultät für Mathematik und Naturwissenschaften