In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)

Supplie, Oliver GND; May, Matthias M.; Kleinschmidt, Peter; Nägelein, Andreas; Paszuk, Agnieszka GND; Brückner, Sebastian GND; Hannappel, Thomas GND

Metalorganic vapor phase epitaxy of III-V compounds commonly involves arsenic. We study the formation of atomically well-ordered, As-modified Si(100) surfaces and subsequent growth of GaP/Si(100) quasisubstrates in situ with reflection anisotropy spectroscopy. Surface symmetry and chemical composition are measured by low energy electron diffraction and X-ray photoelectron spectroscopy, respectively. A twostep annealing procedure of initially monohydride-terminated, (1 × 2) reconstructed Si(100) in As leads to a predominantly (1 × 2) reconstructed surface. GaP nucleation succeeds analogously to As-free systems and epilayers free of antiphase disorder may be grown subsequently. The GaP sublattice orientation, however, is inverted with respect to GaP growth on monohydride-terminated Si(100).


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Supplie, Oliver / May, Matthias M. / Kleinschmidt, Peter / et al: In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100). 2015.

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