In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)

Supplie, Oliver GND; May, Matthias M.; Kleinschmidt, Peter; Nägelein, Andreas; Paszuk, Agnieszka GND; Brückner, Sebastian GND; Hannappel, Thomas GND

Metalorganic vapor phase epitaxy of III-V compounds commonly involves arsenic. We study the formation of atomically well-ordered, As-modified Si(100) surfaces and subsequent growth of GaP/Si(100) quasisubstrates in situ with reflection anisotropy spectroscopy. Surface symmetry and chemical composition are measured by low energy electron diffraction and X-ray photoelectron spectroscopy, respectively. A twostep annealing procedure of initially monohydride-terminated, (1 × 2) reconstructed Si(100) in As leads to a predominantly (1 × 2) reconstructed surface. GaP nucleation succeeds analogously to As-free systems and epilayers free of antiphase disorder may be grown subsequently. The GaP sublattice orientation, however, is inverted with respect to GaP growth on monohydride-terminated Si(100).

Cite

Citation style:
Supplie, O., May, M.M., Kleinschmidt, P., Nägelein, A., Paszuk, A., Brückner, S., Hannappel, T., 2015. In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100). APL materials : high impact open access journal in functional materials science, APL materials : high impact open access journal in functional materials science 3, 2015, art,126110. https://doi.org/10.1063/1.4939005
Could not load citation form. Default citation form is displayed.

Rights

Use and reproduction:

Export