@PhdThesis{dbt_mods_00025756,
  author = 	{M{\"o}ller Dr.rer.nat., Christian},
  title = 	{Licht-induzierte Defektkinetik in solar grade Silizium},
  year = 	{2015},
  month = 	{Mar},
  day = 	{18},
  keywords = 	{Eisen-Akzeptor-Paare; Licht-induzierte Degradation; ASi-Sii-Defekt},
  abstract = 	{In this work, the defect kinetics of iron-acceptor pairs and light-induced
degradationinduced by illumination is
investigated.Iron-acceptor-pair-reaction is detected via charge carrier
lifetime measurement in codopedn-type silicon. To explain the
experimentally observed process a dynamic modelis proposed and discussed.
The model is based on the charge state change of the irondue to the
permanent recombination over the iron trap level. Further, temperature
andillumination-dependent charge carrier lifetime measurements are executed
to determinethe activation energy of the dissociation and association
process, respectively.Light-induced degradation is experimentally detected
in indium-doped silicon. The ASi - Siidefectis proposed and discussed as
origin of the light-induced degradation in silicon. Further,the P-line in
the low-temperature photoluminescence spectrum of indium-dopedsilicon
samples is identified as the neutral charge state of the InSi - Sii-defect.},
  url = 	{https://www.db-thueringen.de/receive/dbt_mods_00025756},
  file = 	{:https://www.db-thueringen.de/servlets/MCRZipServlet/dbt_derivate_00031490:TYPE},
  language = 	{de}
}